W thickness dependence of spin Hall effect for (W/Hf)-multilayer electrode/CoFeB/MgO systems with flat and highly (100) oriented MgO layer
نویسندگان
چکیده
منابع مشابه
Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100).
The spin polarization of current injected into GaAs from a CoFe/MgO(100) tunnel injector is inferred from the electroluminescence polarization from GaAs/AlGaAs quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52...
متن کاملLarge spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures
The phenomena based on spin-orbit interaction in heavy metal/ferromagnet/oxide structures have been investigated extensively due to their applicability to the manipulation of the magnetization direction via the in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a ...
متن کاملLayer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO.
Current-induced effective magnetic fields can provide efficient ways of electrically manipulating the magnetization of ultrathin magnetic heterostructures. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, a quantitative understanding of the effective field, including its dire...
متن کاملUltrafast laser-excited spin transport in Au/Fe/MgO(001): Relevance of the Fe layer thickness
Propagation dynamics of spin-dependent optical excitations is investigated by back-pump front-probe experiments in Au/Fe/MgO(001). We observe a decrease for all pump-probe signals detected at the Au surface, if the Fe thickness in increased. Relaxation processes within Fe limit the emission region of ballistic spins at the Fe/Au interface to ~1 nm. Recently, we have established magneto-optical ...
متن کاملIncrease in spin injection efficiency of a CoFe/MgO„100... tunnel spin injector with thermal annealing
Postgrowth thermal annealing of a CoFe/MgOs100d tunnel spin injector grown on a GaAs/AlGaAs quantum well structure results in a significantly increased spin injection efficiency as inferred from the polarization of heavy-hole electroluminescence from a quantum well optical detector. The as-deposited sample displayed an initial polarization at 100 K of 43%, which was increased to 52% after a 1 h...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2021
ISSN: 2158-3226
DOI: 10.1063/9.0000011